US 12,283,322 B2
Three-dimensional NAND memory and fabrication method thereof
Linchun Wu, Hubei (CN); Kun Zhang, Hubei (CN); and Wenxi Zhou, Hubei (CN)
Assigned to Yangtze Memory Technologies Co., Ltd., Hubei (CN)
Filed by Yangtze Memory Technologies Co., Ltd., Hubei (CN)
Filed on Mar. 28, 2022, as Appl. No. 17/705,983.
Application 17/705,983 is a continuation of application No. PCT/CN2021/114742, filed on Aug. 26, 2021.
Claims priority of application No. 202110306440.X (CN), filed on Mar. 23, 2021.
Prior Publication US 2022/0310162 A1, Sep. 29, 2022
Int. Cl. G11C 16/04 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01)
CPC G11C 16/0483 (2013.01) [H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02)] 23 Claims
OG exemplary drawing
 
1. A method for forming a three-dimensional (3D) memory device, comprising:
disposing an alternating dielectric stack over a substrate, wherein the alternating dielectric stack includes first dielectric layers and second dielectric layers alternatingly stacked on the substrate;
forming a channel structure penetrating through the alternating dielectric stack and extending into the substrate, wherein the channel structure includes a channel layer disposed on a sidewall of a memory film;
removing the substrate and a portion of the memory film that extends into the substrate to expose a portion of the channel layer;
disposing an array common source (ACS) on the exposed portion of the channel layer;
disposing an ACS contact structure to contact the ACS; and
disposing a through-silicon-via (TSV) contact structure to contact a TSV. wherein an isolation spacer formed on a sidewall of the TSV contact structure extends through the ACS and isolates the TSV and the ACS.