US 12,283,299 B2
Magnetic storage device and control method of magnetic storage device
Yosuke Kobayashi, Tokyo (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Feb. 16, 2023, as Appl. No. 18/170,257.
Application 18/170,257 is a continuation of application No. 17/003,931, filed on Aug. 26, 2020, granted, now 11,610,618.
Claims priority of application No. 2020-108821 (JP), filed on Jun. 24, 2020.
Prior Publication US 2023/0197134 A1, Jun. 22, 2023
Int. Cl. G11C 11/16 (2006.01)
CPC G11C 11/1677 (2013.01) [G11C 11/1695 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A magnetic storage device, comprising:
a nonvolatile magnetic memory including a plurality of memory cells each equipped with a magnetoresistance effect element;
a magnetic sensor configured to measure a magnitude of an external magnetic field; and
a controller configured to cause data to be written to the plurality of memory cells in a writing operation with writing parameters set according to the measured magnitude of the external magnetic field, wherein
the controller:
determines a threshold value based on a current number of times for writing data to the memory cells within the same writing operation; and
upon receipt of the measured magnitude of the external magnetic field that is greater than or equal to the determined threshold value, increases the number of times for writing data to the memory cells within the same writing operation.