US 12,282,665 B2
Memory operation method and memory device for data movement
Po-Sheng Chou, Hsinchu County (TW); Hsiang-Yu Huang, Hsinchu County (TW); and Yan-Wen Wang, Hsinchu County (TW)
Assigned to SILICON MOTION INC., Hsinchu County (TW)
Filed by SILICON MOTION INC., Hsinchu County (TW)
Filed on Jun. 6, 2023, as Appl. No. 18/330,349.
Claims priority of application No. 111139699 (TW), filed on Oct. 19, 2022.
Prior Publication US 2024/0134538 A1, Apr. 25, 2024
Prior Publication US 2024/0231640 A9, Jul. 11, 2024
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0619 (2013.01) [G06F 3/064 (2013.01); G06F 3/0653 (2013.01); G06F 3/0679 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A memory operation method, comprising:
when a first super block of a memory device is an open block, obtaining a first read count of at least one of a plurality of first memory blocks in the first super block, wherein the first read count is a number of read times that a data of the at least one of the plurality of first memory blocks has been read;
determining whether the first read count is larger than a first threshold;
when the first read count is larger than the first threshold, moving at least one part data in the first super block to a safe area in the memory device, wherein the at least one part data comprises the data of the at least one of the plurality of first memory blocks;
obtaining a read count sum of a number of read times that a data of a plurality of second memory blocks in a second super block has been read through a memory channel as a second read count, wherein the second super block is not in a program state; and
selectively moving a data of the second super block according to the second read count and a second threshold, wherein the second threshold is different from the first threshold.