US 12,282,664 B2
Storage devices including nonvolatile memory and related methods of operating such storage devices
Heeseok Eun, Suwon-si (KR); Jinwook Lee, Suwon-si (KR); and Bongsoon Lim, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on May 10, 2023, as Appl. No. 18/314,978.
Claims priority of application No. 10-2022-0109014 (KR), filed on Aug. 30, 2022.
Prior Publication US 2024/0069751 A1, Feb. 29, 2024
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/0619 (2013.01) [G06F 3/064 (2013.01); G06F 3/0679 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A storage device, comprising:
a plurality of nonvolatile memory devices including at least first and second nonvolatile memory devices;
a storage controller configured to receive a plurality of data blocks from a host, to generate a first parity block by performing a first XOR operation on the plurality of data blocks, and to distribute the plurality of data blocks and the first parity block to respective ones of the plurality of nonvolatile memory devices, wherein a first data block of the plurality of data blocks is distributed to the first nonvolatile memory device and the first parity block is distributed to the second nonvolatile memory device; and
a data bus configured to transfer signals between the plurality of nonvolatile memory devices and the storage controller,
wherein the storage controller is configured to receive a new data block from the host and to provide the new data block to the second nonvolatile memory device, wherein the new data block is associated with the first data block,
wherein the first nonvolatile memory device is configured to provide the first data block to the second nonvolatile memory device through the data bus without using the storage controller, and
wherein the second nonvolatile memory device is configured to generate a new parity block by performing a second XOR operation on the new data block, the first data block, and the first parity block without the first nonvolatile memory device performing an XOR operation, and to store the new parity block.