US 12,282,353 B2
Clock control circuit module, memory storage device and clock control method
Shih-Yang Sun, Taoyuan (TW); and Guan-Wei Wu, New Taipei (TW)
Assigned to PHISON ELECTRONICS CORP., Miaoli (TW)
Filed by PHISON ELECTRONICS CORP., Miaoli (TW)
Filed on Apr. 25, 2023, as Appl. No. 18/306,974.
Claims priority of application No. 112109859 (TW), filed on Mar. 16, 2023.
Prior Publication US 2024/0310870 A1, Sep. 19, 2024
Int. Cl. G06F 1/08 (2006.01)
CPC G06F 1/08 (2013.01) 30 Claims
OG exemplary drawing
 
11. A memory storage device, comprising:
a connection interface unit configured to be coupled to a host system;
a rewritable non-volatile memory module;
a memory control circuit unit coupled to the connection interface unit and the rewritable non-volatile memory module; and
a clock control circuit module disposed in the connection interface unit,
wherein the clock control circuit module is configured to:
generate a clock signal;
receive a first signal and the clock signal and sample the first signal according to the clock signal to generate a sampling signal, wherein the sampling signal comprises a first sampling signal and a second sampling signal, the first sampling signal reflects a first sampling result of the clock signal on a first target signal in the first signal, and the second sampling signal reflects a second sampling result of the clock signal on a second target signal in the first signal;
obtain first position information corresponding to a first transition point of the first target signal and second position information corresponding to a second transition point of the second target signal respectively according to the first sampling signal and the second sampling signal; and
evaluate a frequency shift status between the first signal and the clock signal according to the first position information and the second position information.