US 12,282,183 B2
Lighting device
Hsiao-Lang Lin, Miao-Li County (TW); and Tsung-Han Tsai, Miao-Li County (TW)
Assigned to InnoLux Corporation, Miao-Li County (TW)
Filed by InnoLux Corporation, Miao-Li County (TW)
Filed on May 2, 2024, as Appl. No. 18/653,963.
Application 18/653,963 is a continuation of application No. 17/984,265, filed on Nov. 10, 2022, granted, now 12,001,045.
Application 17/984,265 is a continuation of application No. 17/412,233, filed on Aug. 25, 2021, granted, now 11,513,278, issued on Nov. 29, 2022.
Application 17/412,233 is a continuation of application No. 16/223,013, filed on Dec. 17, 2018, granted, now 11,125,930, issued on Sep. 21, 2021.
Prior Publication US 2024/0288624 A1, Aug. 29, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. F21V 8/00 (2006.01)
CPC G02B 6/005 (2013.01) [G02B 6/0053 (2013.01); G02B 6/0055 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A lighting device, comprising:
a first substrate;
an isolation layer disposed on the first substrate, comprising an inorganic-organic-inorganic layer;
a shielding structure disposed on the isolation layer, comprising a first aperture and a second aperture;
a plurality of first lighting units emitting a first output light, each of the plurality of first lighting units comprising:
a first light source configured to provide a first light;
a first reflective layer configured to reflect the first light, wherein the first reflective layer is disposed on one side of the first light source; and
a first light converting structure disposed in the first aperture of the shielding structure and configured to convert the first light into the first output light, wherein the first light converting structure is disposed on the first light source, and the first light converting structure comprises a plurality of first quantum dots; and
a plurality of second lighting units emitting a second output light, each of the plurality of second lighting units comprising:
a second light source configured to provide a second light;
a second reflective layer configured to reflect the second light, wherein the second reflective layer is disposed on one side of the second light source; and
a second light converting structure disposed in the second aperture of the shielding structure and configured to convert the second light into the second output light, wherein the second light converting structure is disposed on the second light source, the second light converting structure comprises a plurality of second quantum dots, and the second quantum dots are different from the first quantum dots,
wherein the first output light has a first sub peak between 400 nm and 500 nm and a first main peak between 590 nm and 780 nm, the second output light has a second sub peak between 400 nm and 500 nm and a second main peak between 520 nm and 589 nm, and a normal intensity of the first sub peak is less than a normal intensity of the second sub peak,
wherein the normal intensity of the first output light is measured along a normal direction and the normal intensity of the second output light is measured along the normal direction, and
wherein the normal intensity of the first sub peak is in a range from 0.1% to 10% based on 100% of a normalized intensity of a normal intensity of the first main peak.