US 12,282,180 B2
Stealth device
Jae Won Hahn, Seoul (KR); Hyeon Bo Shim, Seoul (KR); Ki Wook Han, Gyeonggi-do (KR); and Joo Kwon Song, Seoul (KR)
Assigned to INDUSTRY-ACADEMIC COOPERATION FOUNDATION YONSEI UNIVERSITY, Seoul (KR)
Filed by INDUSTRY-ACADEMIC COOPERATION FOUNDATION YONSEI UNIVERSITY, Seoul (KR)
Filed on Jan. 13, 2022, as Appl. No. 17/647,957.
Claims priority of application No. 10-2021-0027802 (KR), filed on Mar. 3, 2021.
Prior Publication US 2022/0283344 A1, Sep. 8, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G02B 5/20 (2006.01); B32B 3/26 (2006.01); B32B 7/023 (2019.01); B32B 7/025 (2019.01); F41H 3/00 (2006.01); G02B 5/00 (2006.01)
CPC G02B 5/204 (2013.01) [B32B 3/266 (2013.01); B32B 7/023 (2019.01); B32B 7/025 (2019.01); F41H 3/00 (2013.01); G02B 5/008 (2013.01); G02B 5/208 (2013.01)] 14 Claims
OG exemplary drawing
 
12. A stealth device comprising:
a wavelength-selective absorption pattern layer made of a material having electrical conductivity, wherein the wavelength-selective absorption pattern layer is composed of conductive thin-film patterns capable of causing plasmonic resonance at a first wavelength and a second wavelength different from the first wavelength; and
a dielectric layer disposed below the wavelength-selective absorption pattern layer and made of a dielectric material,
wherein the wavelength-selective absorption pattern layer includes a plurality of unit areas, wherein each unit area has a square planar shape having two sides parallel to a first direction and two sides parallel to a second direction perpendicular to the first direction,
wherein the conductive thin-film patterns are disposed in each of the unit areas,
wherein the conductive thin-film patterns includes:
a first thin-film pattern having a planar shape of a first square having two sides parallel to the first direction and two sides parallel to the second direction, wherein each side of the first square has a first length;
a second thin-film pattern having a planar shape of a second square having two sides parallel to the first direction and two sides parallel to the second direction, wherein each side of the second square has a second length smaller than the first length, wherein a diagonal line of the first thin-film pattern and a diagonal line of the second thin-film pattern coincide with one of two diagonal lines of the unit area; and
two third thin-film patterns, wherein each of the two third thin-film patterns has a rectangular planar shape in which a long side parallel to the second direction has the first length and a short side parallel to the first direction has the second length, wherein one of the two third thin-film patterns is disposed adjacent to a first side of the first thin-film pattern, while the other thereof is disposed adjacent to a second side of the first thin-film pattern perpendicular to the first side of the first thin-film pattern.