| CPC C30B 29/406 (2013.01) [C30B 29/38 (2013.01); C30B 25/02 (2013.01)] | 4 Claims |
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1. An epitaxial structure comprising:
a substrate;
a nucleation layer formed on the substrate;
a buffer layer formed on the nucleation layer;
a channel layer formed on the buffer layer;
a barrier layer formed on the channel layer; and
a P-type aluminum indium gallium nitride layer formed on the barrier layer, wherein a material of the P-type aluminum indium gallium nitride layer is AlInGaN with a P-type dopant, the P-type dopant is magnesium, iron, zinc, or carbon, wherein
a content of aluminum in the P-type aluminum indium gallium nitride layer includes alternating changes among a first minimum content, a first increasing content, a first discontinuous stepwise increasing content, and a first reducing content in a thickness direction,
a content of indium in the P-type aluminum indium gallium nitride layer includes alternating changes among a second minimum content, a second increasing content, a second discontinuous stepwise increasing content, and a second reducing content in the thickness direction, the first discontinuous stepwise increasing content in the content of aluminum and the second discontinuous stepwise increasing content in the content of indium simultaneously increase in the thickness direction,
a content of gallium in the P-type aluminum indium gallium nitride layer includes alternating changes among a third maximum content, a third reducing content, a third discontinuous stepwise reducing content, and a third increasing content in the thickness direction,
a doping concentration of the P-type dopant in the P-type aluminum indium gallium nitride layer includes alternating changes among a maximum concentration, a reducing concentration, a discontinuous stepwise reducing concentration, and an increasing concentration in the thickness direction, and
an initial value of the first discontinuous stepwise increasing content in the content of aluminum is more than 0% and less than or equal to 50%, an end value of the first discontinuous stepwise increasing content in the content of aluminum is 50% to 100%, an initial value of the second discontinuous stepwise increasing content in the content of indium is more than 0% and less than or equal to 50%, and an end value of the second discontinuous stepwise increasing content in the content of indium is 5% to 50%.
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