US 12,281,387 B2
Method of depositing metal films
Feng Q. Liu, San Jose, CA (US); Mark Saly, Santa Clara, CA (US); David Thompson, San Jose, CA (US); Annamalai Lakshmanan, Fremont, CA (US); Avgerinos V. Gelatos, Scotts Valley, CA (US); and Joung Joo Lee, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Dec. 30, 2021, as Appl. No. 17/566,026.
Prior Publication US 2023/0227975 A1, Jul. 20, 2023
Int. Cl. C23C 16/455 (2006.01); C07F 17/00 (2006.01); C07F 17/02 (2006.01); C23C 16/18 (2006.01)
CPC C23C 16/45553 (2013.01) [C07F 17/00 (2013.01); C07F 17/02 (2013.01); C23C 16/18 (2013.01); C23C 16/45536 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A method of depositing a film, the method comprising:
forming a carbon-less metal-containing film in a process cycle comprising sequential exposure of a substrate to an iodine-containing reactant, purge gas, organometallic precursor, and purge gas,
wherein the iodine-containing reactant comprises a species having a formula RIx, where R is one or more of a C1-C10 alkyl, C3-C10 cycloalkyl, C2-C10 alkenyl, or C2-C10 alkynyl group, I is an iodine group and x is in a range of 1 to 4, and
wherein the organometallic precursor has a structure of general formulae (III)

OG Complex Work Unit Chemistry
wherein M is molybdenum (Mo), and R″ is independently selected from a C3-C10 cycloalkyl, C3-C10 cycloalkenyl, or C5-C10 cycloalkynyl group.