US 12,281,386 B2
Method of processing substrate for forming film containing silicon by supplying precursor containing Si—C bonds
Kimihiko Nakatani, Toyama (JP)
Assigned to KOKUSAI ELECTRIC CORPORATION, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on Jul. 19, 2023, as Appl. No. 18/355,136.
Application 18/355,136 is a continuation of application No. 16/224,256, filed on Dec. 18, 2018, granted, now 11,746,416.
Claims priority of application No. 2017-243929 (JP), filed on Dec. 20, 2017.
Prior Publication US 2023/0357926 A1, Nov. 9, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 16/36 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01); H01L 21/02 (2006.01)
CPC C23C 16/45531 (2013.01) [C23C 16/36 (2013.01); C23C 16/56 (2013.01); H01L 21/02126 (2013.01); H01L 21/02219 (2013.01); C23C 16/45534 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A method of processing a substrate, comprising:
forming a film on the substrate by performing a cycle a predetermined number of times, the cycle including:
(a) supplying a first precursor containing one or more Si—C bonds and not containing halogen to the substrate under a condition that at least a part of the Si—C bonds in the first precursor is held without being cut; and
(b) supplying a second precursor containing one or more Si—N bonds and not containing an alkyl group to the substrate under a condition that at least a part of the Si—N bonds in the second precursor is held without being cut.