| CPC C23C 16/4404 (2013.01) [C23C 16/4405 (2013.01); C23C 16/4408 (2013.01); C23C 16/45565 (2013.01); C23C 16/5096 (2013.01)] | 20 Claims |
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1. A deposition apparatus, comprising:
a reactor chamber having a chamber dome and chamber walls supporting the chamber dome, wherein the chamber dome is curved from the chamber walls;
a holder disposed in the reactor chamber for holding a substrate;
an aluminum showerhead disposed in the chamber dome of the reactor chamber and opposite to the holder, the aluminum showerhead comprising a plurality of holes for allowing reaction gasses entering the reactor chamber, the aluminum showerhead further comprising a stem extending through the chamber dome, an upper portion coupled to the stem with a curved shape that is parallel with a curve of the chamber dome, and a lower portion including a showerhead plate that is flat, wherein the curve of the chamber dome has a bottommost position at a level height between a bottommost position of the curved shape of the upper portion of the aluminum showerhead and the showerhead plate;
a reactant gas supply connected to the stem of the aluminum showerhead via a first tube and configured to provide a reactant gas into the reactor chamber through the first tube, the stem, the upper portion, and the lower portion of the aluminum showerhead;
a cleaning gas supply connected to the aluminum showerhead via a second tube and configured to provide a cleaning gas into the reactor chamber through the second tube, the stem, the upper portion, and the lower portion of the aluminum showerhead, wherein the reactant and cleaning gas supplies are different gas supplies, wherein the cleaning gas is bromine (Br2), and is introduced into the reactor chamber after exhausting a remainder of the reactant gas and heating the reactor chamber;
an anodized aluminum mask layer covering the showerhead plate, wherein the anodized aluminum mask layer is grown from anodizing an aluminum horizontal surface of the aluminum showerhead and anodizing aluminum vertical sidewalls in the plurality of holes of the aluminum showerhead, wherein the anodized aluminum mask layer grown from anodizing the aluminum vertical sidewalls in the plurality of holes of the aluminum showerhead remains in the plurality of holes of the aluminum showerhead when the aluminum showerhead is placed in the reactor chamber, and the anodized aluminum mask layer is configured for preventing the aluminum showerhead from being etched during a plasma cleaning process, wherein the anodized aluminum mask layer has vertical portions in the holes of the aluminum showerhead and horizontal portions on the aluminum horizontal surface of the aluminum showerhead, the vertical portions are perpendicular to the horizontal portions, and the vertical portions of the anodized aluminum mask layer in the holes of the aluminum showerhead are thinner than the horizontal portions of the anodized aluminum mask layer on the aluminum horizontal surface of the aluminum showerhead when the aluminum showerhead is placed in the reactor chamber;
a cleaning gas line downstream of the cleaning gas supply and extending to a first partial region of a gas inlet of the aluminum showerhead;
a reactant gas line downstream of the reactant gas supply and extending to a second partial region of the gas inlet of the aluminum showerhead separated from the first partial region of the gas inlet of the aluminum showerhead, wherein an entirety of the reactant gas line is separated from the cleaning gas line, wherein the reactant gas line comprises the first tube, the cleaning gas line comprises the second tube, wherein from a side view, the first tube and the second tube intersect with a top end of the stem at separated first and second regions on the top end of the stem, and guide the reactant gas and the cleaning gas to flow into the stem through the separated first and second regions on the top end;
a purge gas supply and a purge conduit connecting the purge gas supply to a vent inlet of the reactor chamber; and
a purge gas evacuation device comprising a vacuum pump and an evacuation conduit connecting the vacuum pump to a vent outlet of the reactor chamber opposite to the vent inlet, wherein an upstream end of the purge conduit connecting the purge conduit and the purge gas supply at a first level height higher than a second level height of a topmost position of the holder, and a downstream end of the evacuation conduit connecting the evacuation conduit and the vacuum pump is also at the first level height higher than the second level height of the topmost position of the holder.
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