US 12,281,382 B2
Methods for depositing blocking layers on conductive surfaces
Lakmal C. Kalutarage, San Jose, CA (US); Bhaskar Jyoti Bhuyan, San Jose, CA (US); Aaron Dangerfield, San Jose, CA (US); Feng Q. Liu, San Jose, CA (US); Mark Saly, Santa Clara, CA (US); Michael Haverty, Mountain View, CA (US); and Muthukumar Kaliappan, Fremont, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on May 24, 2023, as Appl. No. 18/201,442.
Application 18/201,442 is a division of application No. 17/315,223, filed on May 7, 2021, granted, now 11,702,733.
Prior Publication US 2023/0295794 A1, Sep. 21, 2023
Int. Cl. C23C 16/04 (2006.01); C23C 16/02 (2006.01); C23C 16/56 (2006.01); H01L 21/02 (2006.01); H01L 21/32 (2006.01)
CPC C23C 16/04 (2013.01) [C23C 16/0272 (2013.01); C23C 16/56 (2013.01); H01L 21/02172 (2013.01); H01L 21/0228 (2013.01); H01L 21/32 (2013.01); H01L 21/0217 (2013.01); H01L 21/02211 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A method of selectively depositing a blocking layer, the method comprising exposing a substrate comprising a metallic material having a first surface and a dielectric material having a second surface to a blocking compound to selectively form a blocking layer on the first surface over the second surface, the blocking compound having a general formula of:

OG Complex Work Unit Chemistry
where each X is independently selected from the group consisting of oxygen, sulfur, or phosphorous, n is selected to maintain a neutral charge, R′ is selected from hydrogen, alkyl or aryl groups comprising 1-18 carbon atoms, and each R is independently selected from alkyl or aryl groups comprising 1-8 carbon atoms.