CPC C23C 16/04 (2013.01) [C23C 16/0272 (2013.01); C23C 16/56 (2013.01); H01L 21/02172 (2013.01); H01L 21/0228 (2013.01); H01L 21/32 (2013.01); H01L 21/0217 (2013.01); H01L 21/02211 (2013.01)] | 5 Claims |
1. A method of selectively depositing a blocking layer, the method comprising exposing a substrate comprising a metallic material having a first surface and a dielectric material having a second surface to a blocking compound to selectively form a blocking layer on the first surface over the second surface, the blocking compound having a general formula of:
![]() where each X is independently selected from the group consisting of oxygen, sulfur, or phosphorous, n is selected to maintain a neutral charge, R′ is selected from hydrogen, alkyl or aryl groups comprising 1-18 carbon atoms, and each R is independently selected from alkyl or aryl groups comprising 1-8 carbon atoms.
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