| CPC C23C 14/3485 (2013.01) [C23C 14/54 (2013.01); H01J 37/3467 (2013.01); H01J 2237/24564 (2013.01); H01J 2237/332 (2013.01)] | 20 Claims |

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1. A method for processing a substrate, comprising:
supplying pulsed DC power to a target disposed in a processing volume of a processing chamber for depositing sputter material onto a substrate;
in response to a reverse current being equal to or greater than a first threshold during a first time frame within a pulse off time, generating a first pulsed DC power shutdown response to stop supplying power to the target; and
in response to the reverse current being equal to or greater than a second threshold during a second time frame within the pulse off time, generating a second pulsed DC power shutdown response to stop supplying power to the target, wherein the first threshold is different from the second threshold, and the first time frame is different from the second time frame.
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