US 12,281,379 B2
Preparation method of niobium diselenide film with ultra-low friction and low electrical noise under sliding electrical contact in vacuum
Li Ji, Gansu (CN); Xiaohong Liu, Gansu (CN); Yang Yang, Gansu (CN); Hongxuan Li, Gansu (CN); Huidi Zhou, Gansu (CN); and Jianmin Chen, Gansu (CN)
Assigned to LANZHOU INSTITUTE OF CHEMICAL PHYSICS CAS, Lanzhou (CN)
Filed by LANZHOU INSTITUTE OF CHEMICAL PHYSICS CAS, Gansu (CN)
Filed on Dec. 16, 2022, as Appl. No. 18/067,485.
Claims priority of application No. 202210058690.0 (CN), filed on Jan. 19, 2022.
Prior Publication US 2023/0227963 A1, Jul. 20, 2023
Int. Cl. C23C 14/06 (2006.01); C23C 14/02 (2006.01); C23C 14/34 (2006.01); C23C 14/35 (2006.01); H01J 37/34 (2006.01); C23C 14/50 (2006.01)
CPC C23C 14/0623 (2013.01) [C23C 14/022 (2013.01); C23C 14/025 (2013.01); C23C 14/345 (2013.01); C23C 14/35 (2013.01); C23C 14/352 (2013.01); H01J 37/3426 (2013.01); C23C 14/505 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A preparation method of a niobium diselenide (NbSe2) film with ultra-low friction and low electrical noise under sliding electrical contact in vacuum, wherein the preparation method is conducted by a direct current (DC) closed field magnetron sputtering process; and through process design of low deposition pressure and low sputtering energy, the preparation method comprises the following steps:
(1) placing a to-be-coated substrate with a clean surface on a sample holder in a coating chamber, and conducting argon plasma cleaning and etching to remove residual impurities and pollutants on a surface of the substrate;
(2) preparing a titanium (Ti) transition layer on the surface of the substrate by taking argon as a first sputtering gas and a titanium target as a first sputtering target, wherein the Ti transition layer has a thickness of 0.1 to 1 μm; and
(3) preparing the NbSe2 film on the Ti transition layer by taking argon as a second sputtering gas and an NbSe2 target as a second sputtering target;
wherein in step (3), the NbSe2 film is prepared at a sputtering pressure of 0.04 to 0.3 Pa, a target sputtering power of 0.5 W/cm2, and a negative substrate bias voltage of −50 to −400 V.