| CPC C01B 33/021 (2013.01) [B22F 1/056 (2022.01); B22F 9/04 (2013.01); B22F 9/082 (2013.01); C01B 33/027 (2013.01); C22C 1/0408 (2013.01); C22C 1/0483 (2013.01); C22C 1/1084 (2013.01); D06M 11/83 (2013.01); H01L 31/028 (2013.01); H01L 31/03845 (2013.01); H01L 31/03926 (2013.01); H01L 33/02 (2013.01); H01M 4/134 (2013.01); H01M 4/386 (2013.01); B22F 2009/042 (2013.01); B22F 2009/043 (2013.01); B22F 2304/056 (2013.01); B82Y 30/00 (2013.01); C01P 2004/60 (2013.01); C01P 2004/64 (2013.01)] | 5 Claims |

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1. An electrical device, comprising:
an electrically-conductive substrate having a flexible structure and porous silicon nano-particles, wherein the flexible structure is formed by coating, encapsulating, and entangling the electrically-conductive substrate with the porous silicon nano-particles, and wherein the porous silicon nano-particles are produced according to steps of:
(I) alloying a raw silicon material with at least one distillable alloying metal selected from zinc and magnesium to form an alloy;
(II) milling the alloy to form alloy nano-particles of 100 nm-150 nm in diameter, the milling being performed in an inert environment to alleviate oxidation of the alloy;
(III) distilling the alloying metal from the alloy nano-particles so that a porous silicon structure is produced, the distilling being performed in a vacuum furnace; and
(IV) milling the porous silicon structure in an inert environment to break the porous silicon structure apart, thereby to produce the porous silicon nano-particles.
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