US 11,962,127 B2
External cavity semiconductor laser
Yushi Kaneda, Tucson, AZ (US)
Assigned to Arizona Board of Regents on Behalf of the University of Arizona, Tucson, AZ (US)
Appl. No. 16/959,448
Filed by Arizona Board of Regents on Behalf of the University of Arizona, Tucson, AZ (US)
PCT Filed Dec. 19, 2018, PCT No. PCT/US2018/066432
§ 371(c)(1), (2) Date Jul. 1, 2020,
PCT Pub. No. WO2019/135915, PCT Pub. Date Jul. 11, 2019.
Claims priority of provisional application 62/614,174, filed on Jan. 5, 2018.
Prior Publication US 2020/0373738 A1, Nov. 26, 2020
Int. Cl. H01S 5/14 (2006.01); H01S 3/08 (2023.01); H01S 3/08022 (2023.01); H01S 3/081 (2006.01); H01S 5/183 (2006.01); H01S 5/04 (2006.01)
CPC H01S 5/141 (2013.01) [H01S 3/08027 (2013.01); H01S 3/08054 (2013.01); H01S 3/0816 (2013.01); H01S 5/18355 (2013.01); H01S 5/18361 (2013.01); H01S 5/041 (2013.01)] 37 Claims
OG exemplary drawing
 
24. A laser system, comprising:
a first semiconductor laser gain device;
a second semiconductor laser gain device; and
an external folded cavity including:
a first mirror positioned at one end of the external folded cavity,
an output coupler positioned at another end of the external folded cavity,
a second mirror positioned between the first semiconductor laser gain device and the second laser gain device,
a third mirror positioned between the second semiconductor laser gain device and the output coupler, and
a first polarization element and a second polarization element, wherein:
the first semiconductor laser gain device is positioned at a first cavity fold between the first mirror and the second mirror,
the second semiconductor laser gain device is positioned at a second cavity fold between the second mirror and the third mirror,
the first polarization element is positioned between the first mirror and the first semiconductor laser gain device,
the second polarization element is positioned between the third mirror and the second semiconductor laser gain device, and
the first and the second polarization elements are configured to cause light that propagates from the first polarization element towards each of the first and the second semiconductor laser gain devices to have an orthogonal polarization state compared to light that propagates from the second polarization element towards each of the first and the second semiconductor laser gain devices.