US 11,961,941 B2
III-nitride multi-wavelength LED arrays with etch stop layer
Robert Armitage, Cupertino, CA (US); and Isaac Wildeson, Nashua, NH (US)
Assigned to Lumileds LLC, San Jose, CA (US)
Filed by Lumileds LLC, San Jose, CA (US)
Filed on Mar. 3, 2023, as Appl. No. 18/178,095.
Application 18/178,095 is a continuation of application No. 17/190,781, filed on Mar. 3, 2021, granted, now 11,631,786.
Claims priority of provisional application 63/112,920, filed on Nov. 12, 2020.
Prior Publication US 2023/0223490 A1, Jul. 13, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 33/32 (2010.01); H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/24 (2010.01); H01L 33/38 (2010.01); H01L 33/50 (2010.01); H05B 45/30 (2020.01)
CPC H01L 33/32 (2013.01) [H01L 27/153 (2013.01); H01L 27/156 (2013.01); H01L 33/0025 (2013.01); H01L 33/0075 (2013.01); H01L 33/06 (2013.01); H01L 33/24 (2013.01); H01L 33/38 (2013.01); H01L 33/502 (2013.01); H05B 45/30 (2020.01); H01L 2933/0016 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A light emitting diode (LED) array comprising:
a first mesa comprising a first top surface, at least a first LED including a first p-type layer, a first n-type layer, and a first color active region, and a first tunnel junction on the first LED, the top surface of the first mesa comprising a second n-type layer on the first tunnel junction, the second n-type layer comprising at least one n-type III-nitride layer with >10% Al mole fraction and at least one n-type III-nitride layer with <10% Al mole fraction;
an adjacent mesa comprising a top surface, the first LED, a second LED including the second n-type layer, a second p-type layer, and a second color active region;
a second tunnel junction on the second LED of the adjacent mesa, and a third n-type layer on the second tunnel junction of the adjacent mesa;
a first trench separating the first mesa and the adjacent mesa;
cathode metallization in the first trench extending continuously from the first color active region of the first mesa to the second color active region of the adjacent mesa; and
anode metallization contacts on the second n-type layer of the first mesa and on the top surface of the adjacent mesa.