US 11,961,925 B2
Engineered nanostructured passivated contacts and method of making the same
Pauls Stradins, Golden, CO (US); William Michael Nemeth, Wheat Ridge, CO (US); David Levi Young, Golden, CO (US); and Caroline Lima Salles de Souza, Golden, CO (US)
Assigned to Alliance for Sustainable Energy, LLC, Golden, CO (US)
Filed by Alliance for Sustainable Energy, LLC, Golden, CO (US)
Filed on Nov. 1, 2021, as Appl. No. 17/516,533.
Claims priority of provisional application 63/107,628, filed on Oct. 30, 2020.
Prior Publication US 2022/0140161 A1, May 5, 2022
Int. Cl. H01L 31/0224 (2006.01); H01L 29/45 (2006.01); H01L 31/18 (2006.01)
CPC H01L 31/022441 (2013.01) [H01L 29/456 (2013.01); H01L 31/1868 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A double-side device comprising, in order:
a first silicon layer comprising n-doped polycrystalline silicon;
a first silicon oxide layer having a first thickness;
a second silicon layer comprising n-type crystalline silicon and having a first textured surface and a second textured surface;
a second silicon oxide layer having a second thickness; and
a third silicon layer comprising p-doped polycrystalline silicon, wherein:
a first plurality of conductive pathways comprising the n-doped polycrystalline silicon pass through the first thickness,
a second plurality of conductive pathways comprising the p-doped polycrystalline silicon pass through the second thickness,
the n-doped polycrystalline silicon penetrates into the second silicon layer forming a first plurality of penetrating regions within the second silicon layer, and
the p-doped polycrystalline silicon penetrates into the second silicon layer forming a second plurality of penetrating regions within the second silicon layer.