US 11,961,910 B2
Multi-metal lateral layer devices with internal bias generation
Milan Pesić, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Aug. 25, 2020, as Appl. No. 17/002,670.
Prior Publication US 2022/0069131 A1, Mar. 3, 2022
Int. Cl. H01L 29/78 (2006.01); H01G 4/005 (2006.01); H01L 29/22 (2006.01); H10B 51/00 (2023.01); H10B 53/00 (2023.01)
CPC H01L 29/78391 (2014.09) [H01G 4/005 (2013.01); H01L 29/22 (2013.01); H10B 51/00 (2023.02); H10B 53/00 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A ferroelectric capacitive device comprising:
a plurality of metal layers comprising:
a first metal layer comprising a first metal having a first work function; and
a second metal layer comprising a second metal having a second work function that is different from the first work function, wherein the first metal layer is approximately parallel to the second metal layer;
a vertical contact that contacts the first metal layer;
a vertical electrode that is approximately perpendicular to the first metal layer and approximately perpendicular to the second metal layer; and
a ferroelectric material that surrounds the vertical electrode and directly contacts the vertical electrode and directly contacts the plurality of metal layers to form the ferroelectric capacitive device with a plurality of switching regions in the ferroelectric material comprising:
a first switching region between the vertical electrode and the first metal layer that switches in response to a voltage between the vertical electrode and the vertical contact; and
a second switching region between the vertical electrode and the second metal layer that switches in response to the voltage between the vertical electrode and the vertical contact.