| CPC H01L 29/7813 (2013.01) [H01L 29/0696 (2013.01); H01L 29/405 (2013.01); H01L 29/407 (2013.01)] | 9 Claims |
|
1. A semiconductor device, comprising:
a first semiconductor region of a first conductivity type;
a second semiconductor region located on the first semiconductor region, the second semiconductor region being of a second conductivity type;
a third semiconductor region located selectively on the second semiconductor region, the third semiconductor region being of the first conductivity type;
a structure body including
an insulating part arranged with the third semiconductor region, the second semiconductor region, and a portion of the first semiconductor region in a second direction and a third direction, the second direction being perpendicular to a first direction, the first direction being from the first semiconductor region toward the second semiconductor region, the third direction crossing the second direction and being perpendicular to the first direction, and
a conductive part located in the insulating part, the conductive part including a portion facing the first semiconductor region in the second and third directions;
a gate electrode facing the second semiconductor region in the second and third directions; and
a high resistance part located in the first semiconductor region,
the high resistance part having a higher electrical resistance than the first semiconductor region,
a plurality of the structure bodies being arranged along the second and third directions,
the plurality of the structure bodies including
a first structure body,
a second structure body next to the first structure body in the second direction, and
a third structure body next to the first structure body in the third direction,
the high resistance part overlapping a circle center of an imaginary circle in the first direction,
the imaginary circle passing through centers in the second and third directions of the first, second, and third structure bodies.
|