US 11,961,799 B2
Semiconductor substrate structure and method of manufacturing the same
Wen Hung Huang, Kaohsiung (TW)
Assigned to ADVANCED SEMICONDUCTOR ENGINEERING, INC., Kaohsiung (TW)
Filed by Advanced Semiconductor Engineering, Inc., Kaohsiung (TW)
Filed on Mar. 17, 2021, as Appl. No. 17/204,829.
Prior Publication US 2022/0302022 A1, Sep. 22, 2022
Int. Cl. H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01)
CPC H01L 23/5226 (2013.01) [H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 23/562 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor substrate structure, comprising:
a substrate defining a cavity;
an electronic device disposed in the cavity;
a filling material disposed on a first region of an upper surface of the electronic device;
a dielectric layer disposed over the electronic device and comprising an extending portion extending into the filling material; and
a first via in the dielectric layer, wherein the first via is horizontally overlapping and spaced apart from the filling material.