US 11,961,759 B2
Interconnects having spacers for improved top via critical dimension and overlay tolerance
Brent A. Anderson, Jericho, VT (US); Lawrence A. Clevenger, Saratoga Springs, NY (US); Nicholas Anthony Lanzillo, Wynantskill, NY (US); Christopher J. Penny, Saratoga Springs, NY (US); Kisik Choi, Watervliet, NY (US); and Robert Robison, Rexford, NY (US)
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Feb. 3, 2022, as Appl. No. 17/592,078.
Application 17/592,078 is a division of application No. 16/861,292, filed on Apr. 29, 2020, granted, now 11,295,978.
Prior Publication US 2022/0157652 A1, May 19, 2022
Int. Cl. H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 27/146 (2006.01); H10N 70/00 (2023.01)
CPC H01L 21/76807 (2013.01) [H01L 21/02019 (2013.01); H01L 21/02065 (2013.01); H01L 23/5226 (2013.01); H01L 23/528 (2013.01); H01L 27/14636 (2013.01); H10N 70/066 (2023.02); H01L 2224/80004 (2013.01)] 5 Claims
OG exemplary drawing
 
1. An interconnect structure for an integrated circuit comprising:
a wafer including a plurality of trenches, the wafer extending along a first axis to define a horizontal wafer length and a second axis orthogonal to the first axis to define a vertical wafer height;
a plurality of first-type interconnect elements embedded in the wafer, each of the first-type interconnect elements in a respective trench among the plurality trenches and directly contacting sidewalls of the respective trench, and each of the first-type interconnect elements extending along the first axis to define a first horizontal length and along the second axis to define a first vertical height;
a second-type interconnect element embedded in the wafer and in a corresponding trench among the plurality of trenches, the second-type of interconnect element directly contacting an underlying first-type interconnect element among the plurality of first-type interconnect elements and directly contacting sidewalls of the corresponding trench, the second-type interconnect element extending along the first axis to define a second horizontal length and along the second axis to define a second vertical height, the second horizontal length being substantially equal to the first horizontal length;
wherein the interconnect structure includes the second-type interconnect element that directly contacts the underlying first-type interconnect element, the second-type interconnect element and the first-type interconnect element defining a conductive via comprising a metal material extending continuously along the second axis from a base of the underlying first-type interconnect element and stopping at the upper surface of the second-type interconnect element,
wherein the plurality of first-type interconnect elements are formed from a single metal material, and the second-type interconnect element formed from a single metal material, and
wherein an upper surface of the wafer is completely and each of the respective trench containing the first-type of interconnect element is not completely filled such that it exposes an upper surface of the first-type of interconnect element,
wherein the second vertical height is greater than the first vertical height.