CPC H01L 21/0337 (2013.01) [C23C 16/38 (2013.01); H01L 21/0332 (2013.01)] | 8 Claims |
1. A semiconductor processing method comprising:
flowing a silicon-containing precursor into a substrate processing region of a semiconductor processing chamber;
flowing a boron-containing precursor and molecular hydrogen (H2) into the substrate processing region of the semiconductor processing chamber, at a boron-to-hydrogen flow rate ratio;
increasing the flow rate of the boron-containing precursor and the H2, wherein the boron-to-hydrogen flow rate ratio remains constant during the flow rate increase;
depositing a boron-and-silicon-containing layer on a substrate in the substrate processing region of the semiconductor processing chamber, wherein the boron-and-silicon-containing layer as a continuously increasing ratio of boron-to-silicon from a first surface in contact with the substrate to a second surface of the boron-and-silicon-containing layer furthest from the substrate.
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