US 11,961,739 B2
Boron concentration tunability in boron-silicon films
Yi Yang, San Jose, CA (US); Krishna Nittala, San Jose, CA (US); Rui Cheng, San Jose, CA (US); Karthik Janakiraman, San Jose, CA (US); Diwakar Kedlaya, San Jose, CA (US); Zubin Huang, Santa Clara, CA (US); and Aykut Aydin, Sunnyvale, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Oct. 5, 2020, as Appl. No. 17/063,339.
Prior Publication US 2022/0108892 A1, Apr. 7, 2022
Int. Cl. H01L 21/033 (2006.01); C23C 16/38 (2006.01)
CPC H01L 21/0337 (2013.01) [C23C 16/38 (2013.01); H01L 21/0332 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A semiconductor processing method comprising:
flowing a silicon-containing precursor into a substrate processing region of a semiconductor processing chamber;
flowing a boron-containing precursor and molecular hydrogen (H2) into the substrate processing region of the semiconductor processing chamber, at a boron-to-hydrogen flow rate ratio;
increasing the flow rate of the boron-containing precursor and the H2, wherein the boron-to-hydrogen flow rate ratio remains constant during the flow rate increase;
depositing a boron-and-silicon-containing layer on a substrate in the substrate processing region of the semiconductor processing chamber, wherein the boron-and-silicon-containing layer as a continuously increasing ratio of boron-to-silicon from a first surface in contact with the substrate to a second surface of the boron-and-silicon-containing layer furthest from the substrate.