US 11,961,719 B2
Vacuum processing method
Nozomu Yoshioka, Tokyo (JP); Kazumasa Okuma, Tokyo (JP); and Takao Arase, Tokyo (JP)
Assigned to HITACHI HIGH-TECH CORPORATION, Tokyo (JP)
Appl. No. 17/435,127
Filed by Hitachi High-Tech Corporation, Tokyo (JP)
PCT Filed Jun. 25, 2020, PCT No. PCT/JP2020/024933
§ 371(c)(1), (2) Date Aug. 31, 2021,
PCT Pub. No. WO2021/260869, PCT Pub. Date Dec. 30, 2021.
Prior Publication US 2023/0122903 A1, Apr. 20, 2023
Int. Cl. H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01)
CPC H01J 37/32862 (2013.01) [H01L 21/02186 (2013.01); H01L 21/31122 (2013.01); H01J 2237/3341 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A vacuum processing method for etching a titanium-containing film in a processing chamber, the vacuum processing method comprising:
a step of etching the film; and
a step of cleaning an inside of the processing chamber by using a mixed gas of nitrogen trifluoride (NF) gas, argon (Ar) gas, chlorine (Cl) gas, and (N2) gas,
wherein said step of cleaning further comprises setting a flow rate ratio of the nitrogen (N2) gas to the mixed gas of the nitrogen trifluoride (NF3) gas, the argon (Ar) gas, and the chlorine (Cl2) gas to be between 0% and 30% to provide a maximum cleaning effect of a titanium-based reaction product.