CPC H01J 37/32862 (2013.01) [H01L 21/02186 (2013.01); H01L 21/31122 (2013.01); H01J 2237/3341 (2013.01)] | 5 Claims |
1. A vacuum processing method for etching a titanium-containing film in a processing chamber, the vacuum processing method comprising:
a step of etching the film; and
a step of cleaning an inside of the processing chamber by using a mixed gas of nitrogen trifluoride (NF) gas, argon (Ar) gas, chlorine (Cl) gas, and (N2) gas,
wherein said step of cleaning further comprises setting a flow rate ratio of the nitrogen (N2) gas to the mixed gas of the nitrogen trifluoride (NF3) gas, the argon (Ar) gas, and the chlorine (Cl2) gas to be between 0% and 30% to provide a maximum cleaning effect of a titanium-based reaction product.
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