US 11,959,171 B2
Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
Timo Hatanpää, Espoo (FI); Katja Väyrynen, Helsinki (FI); Mikko Ritala, Espoo (FI); and Markku Leskelä, Espoo (FI)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Jul. 18, 2022, as Appl. No. 17/866,706.
Application 17/866,706 is a continuation of application No. 16/736,336, filed on Jan. 7, 2020, granted, now 11,390,946.
Claims priority of provisional application 62/793,664, filed on Jan. 17, 2019.
Prior Publication US 2022/0411931 A1, Dec. 29, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 16/14 (2006.01); C23C 16/455 (2006.01)
CPC C23C 16/45553 (2013.01) [C23C 16/14 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a transition metal containing film on a substrate by a cyclical deposition process, the method comprising:
contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a monodentate, bidentate, or multidentate containing adduct ligand; and
contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor, wherein the adduct ligand coordinates to a transition metal atom through at least one of a nitrogen atom, a phosphorous atom, an oxygen atom, or a sulfur atom.