CPC C23C 16/45553 (2013.01) [C23C 16/14 (2013.01)] | 20 Claims |
1. A method of forming a transition metal containing film on a substrate by a cyclical deposition process, the method comprising:
contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a monodentate, bidentate, or multidentate containing adduct ligand; and
contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor, wherein the adduct ligand coordinates to a transition metal atom through at least one of a nitrogen atom, a phosphorous atom, an oxygen atom, or a sulfur atom.
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