US 11,959,169 B2
Asymmetric injection for better wafer uniformity
Eric Kihara Shono, San Mateo, CA (US); Vishwas Kumar Pandey, Madhya Pradesh (IN); Christopher S. Olsen, Fremont, CA (US); Kartik Shah, Saratoga, CA (US); Hansel Lo, San Jose, CA (US); Tobin Kaufman-Osborn, Sunnyvale, CA (US); Rene George, San Carlos, CA (US); Lara Hawrylchak, Gilroy, CA (US); and Erika Hansen, San Jose, CA (US)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Sep. 30, 2022, as Appl. No. 17/958,282.
Application 17/958,282 is a continuation of application No. 16/776,204, filed on Jan. 29, 2020, granted, now 11,486,038.
Claims priority of provisional application 62/897,900, filed on Sep. 9, 2019.
Claims priority of provisional application 62/798,474, filed on Jan. 30, 2019.
Prior Publication US 2023/0028054 A1, Jan. 26, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 16/455 (2006.01); C23C 16/40 (2006.01); C23C 16/458 (2006.01); C23C 16/52 (2006.01); H01L 21/67 (2006.01)
CPC C23C 16/45517 (2013.01) [C23C 16/40 (2013.01); C23C 16/45563 (2013.01); C23C 16/45582 (2013.01); C23C 16/45587 (2013.01); C23C 16/45591 (2013.01); C23C 16/4584 (2013.01); C23C 16/52 (2013.01); H01L 21/67017 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A method for processing a substrate, comprising:
injecting a gas flow in a first direction from a gas source into a gas injector when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, the substrate support having a first edge and a second edge opposite the first edge in a direction orthogonal to the first direction, the processing chamber having a chamber gas inlet and a chamber gas outlet, the substrate support disposed between the chamber gas inlet and the chamber gas outlet in the first direction; and
injecting the gas flow from the gas injector into the processing chamber, wherein:
the gas flow from the gas injector is directed in a second direction and a third direction; and
the second and third directions are misaligned with a center of a substrate disposed on the substrate support and are at an angle to the first direction towards the second edge of the substrate support.