CPC C23C 16/45517 (2013.01) [C23C 16/40 (2013.01); C23C 16/45563 (2013.01); C23C 16/45582 (2013.01); C23C 16/45587 (2013.01); C23C 16/45591 (2013.01); C23C 16/4584 (2013.01); C23C 16/52 (2013.01); H01L 21/67017 (2013.01)] | 10 Claims |
1. A method for processing a substrate, comprising:
injecting a gas flow in a first direction from a gas source into a gas injector when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, the substrate support having a first edge and a second edge opposite the first edge in a direction orthogonal to the first direction, the processing chamber having a chamber gas inlet and a chamber gas outlet, the substrate support disposed between the chamber gas inlet and the chamber gas outlet in the first direction; and
injecting the gas flow from the gas injector into the processing chamber, wherein:
the gas flow from the gas injector is directed in a second direction and a third direction; and
the second and third directions are misaligned with a center of a substrate disposed on the substrate support and are at an angle to the first direction towards the second edge of the substrate support.
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