US 11,959,167 B2
Selective cobalt deposition on copper surfaces
Sang-Ho Yu, Cupertino, CA (US); Kevin Moraes, Mountain View, CA (US); Seshadri Ganguli, Sunnyvale, CA (US); Hua Chung, San Jose, CA (US); and See-Eng Phan, San Jose, CA (US)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jun. 7, 2022, as Appl. No. 17/834,633.
Application 17/834,633 is a continuation of application No. 15/598,687, filed on May 18, 2017, granted, now 11,384,429.
Application 15/598,687 is a continuation of application No. 14/682,218, filed on Apr. 9, 2015, abandoned.
Application 14/682,218 is a continuation of application No. 12/111,921, filed on Apr. 29, 2008, abandoned.
Prior Publication US 2022/0298625 A1, Sep. 22, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 16/16 (2006.01); C23C 16/02 (2006.01); C23C 16/18 (2006.01); C23C 16/455 (2006.01); C23C 16/50 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/324 (2006.01); H01L 21/768 (2006.01)
CPC C23C 16/16 (2013.01) [C23C 16/0218 (2013.01); C23C 16/0245 (2013.01); C23C 16/18 (2013.01); C23C 16/4554 (2013.01); C23C 16/45542 (2013.01); C23C 16/50 (2013.01); H01L 21/02068 (2013.01); H01L 21/02074 (2013.01); H01L 21/2855 (2013.01); H01L 21/28556 (2013.01); H01L 21/28562 (2013.01); H01L 21/324 (2013.01); H01L 21/76849 (2013.01); H01L 21/7685 (2013.01); H01L 21/76862 (2013.01); H01L 21/76883 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for capping a copper surface on a substrate, comprising:
positioning a substrate within a processing chamber, wherein the substrate comprises a contaminated copper surface and a dielectric surface;
exposing the contaminated copper surface to a reducing agent while forming a metallic copper surface during a pre-treatment process;
selectively forming a cobalt capping layer on the metallic copper surface while leaving exposed the dielectric surface, comprising:
exposing the substrate to a cobalt precursor gas to form a sublayer of the cobalt capping layer during a vapor deposition process;
exposing the sublayer of the cobalt capping layer to a plasma during a post-treatment process; and
repeating the vapor deposition process and the post-treatment process a plurality of times to deposit additional sublayers to form the cobalt capping layer; and
depositing a dielectric layer on the cobalt capping layer and the dielectric surface.