US 12,279,534 B2
Spin injection source, magnetic memory, spin hall oscillator, computer, and magnetic sensor
Nam Hai Pham, Tokyo (JP); Takanori Shirakura, Tokyo (JP); and Tsuyoshi Kondo, Kawasaki Kanagawa (JP)
Assigned to INSTITUTE OF SCIENCE TOKYO, Tokyo (JP)
Filed by TOKYO INSTITUTE OF TECHNOLOGY, Tokyo (JP)
Filed on Aug. 24, 2022, as Appl. No. 17/894,167.
Claims priority of application No. 2021-141316 (JP), filed on Aug. 31, 2021.
Prior Publication US 2023/0063084 A1, Mar. 2, 2023
Int. Cl. H10N 50/10 (2023.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/85 (2023.01); H10N 52/00 (2023.01); H10N 52/80 (2023.01)
CPC H10N 50/10 (2023.02) [G11C 11/161 (2013.01); H10B 61/22 (2023.02); H10N 50/85 (2023.02); H10N 52/00 (2023.02); H10N 52/80 (2023.02)] 34 Claims
OG exemplary drawing
 
12. A magnetic memory comprising:
a spin injection source containing YPtBi that is a non-magnetic half Heusler alloy-topological semi-metal, has a spin Hall angle exceeding 1, and has a surface state of Dirac type;
a first ferromagnet that is in contact with the spin injection source and includes a plurality of magnetic domains, the plurality of magnetic domains including a first magnetic domain;
a first conductor that is coupled to one end of at least one of the first ferromagnet and the spin injection source;
a second conductor that is coupled to the other end of at least the one of the first ferromagnet and the spin injection source;
a third conductor that is provided between the first conductor and the second conductor and that is coupled to at least one of the first ferromagnet and the spin injection source;
a second ferromagnet that is provided between the first conductor and the third conductor; and
an insulator interposed between the first magnetic domain of the first ferromagnet and the second ferromagnet,
wherein:
in a case of controlling a magnetization direction of the first magnetic domain, the YPtBi supplies a spin current to the first magnetic domain based on a current flowing between the first conductor and the third conductor in a direction parallel to a first surface that is in contact with the first ferromagnet, and
in a case of moving the plurality of magnetic domains of the first ferromagnet, a voltage is applied across the first conductor and the second conductor.