	US 12,279,528 B2
	Thermoelectric material manufacturing method
Jongrae Lim, Seoul (KR); Jun Kim, Seoul (KR); Jooyoung Park, Seoul (KR); Jeonghun Son, Seoul (KR); and Youngil Jang, Seoul (KR)
Assigned to LG ELECTRONICS INC., Seoul (KR)
Appl. No. 17/422,362
Filed by LG ELECTRONICS INC., Seoul (KR)
PCT Filed Jun. 12, 2019, PCT No. PCT/KR2019/007040 § 371(c)(1), (2) Date Jul. 12, 2021, PCT Pub. No. WO2020/149465, PCT Pub. Date Jul. 23, 2020.
Claims priority of provisional application 62/793,896, filed on Jan. 18, 2019.
Prior Publication US 2022/0077375 A1, Mar. 10, 2022
Int. Cl. H01L 35/34 (2006.01); B22F 3/105 (2006.01); B22F 3/20 (2006.01); B22F 9/08 (2006.01); H01L 35/26 (2006.01); H10N 10/01 (2023.01); H10N 10/857 (2023.01); H10N 10/852 (2023.01)

CPC H10N 10/01 (2023.02) [B22F 3/105 (2013.01); B22F 3/20 (2013.01); B22F 9/08 (2013.01); H10N 10/857 (2023.02); H10N 10/852 (2023.02)]

15 Claims

1. A method for manufacturing a thermoelectric material, the method comprising: preparing a bulk thermoelectric material using thermoelectric material raw materials; producing a powder of the bulk thermoelectric material; adding a metal additive selected from the thermoelectric material raw materials to the powder; forming pellets using the powder and the metal additives; forming an intermediate in which the metal additive is dispersed in the bulk thermoelectric material using the pellets; and sintering the intermediate at a temperature higher than or equal to a melting point of the metal additive and under a pressure of equal to or greater than about 5 MPa, and forming the thermoelectric material having an average grain size of about 5 micron or greater and less than 20 micron and forming dislocations both at an inside and at interfaces of grains of the thermoelectric material.