US 12,279,487 B2
Display device and method of fabricating the same
Sang Jin Park, Yongin-si (KR); Young Dae Kim, Seoul (KR); Young Seok Baek, Hwaseong-si (KR); and Dong Hyun Yang, Seongnam-si (KR)
Assigned to Samsung Display Co., Ltd., Yongin-si (KR)
Filed by Samsung Display Co., Ltd., Yongin-Si (KR)
Filed on May 10, 2022, as Appl. No. 17/741,111.
Claims priority of application No. 10-2021-0159471 (KR), filed on Nov. 18, 2021.
Prior Publication US 2023/0157088 A1, May 18, 2023
Int. Cl. H01L 27/32 (2006.01); H01L 27/12 (2006.01); H10K 59/121 (2023.01); H10K 59/124 (2023.01)
CPC H10K 59/124 (2023.02) [H01L 27/127 (2013.01); H10K 59/1213 (2023.02); H01L 27/1248 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A display device comprising:
a substrate;
a first semiconductor layer disposed on the substrate;
a first gate insulating layer disposed on the first semiconductor layer;
a first gate electrode disposed on the first gate insulating layer and overlapping the first semiconductor layer;
a first interlayer insulating layer disposed on the first gate electrode;
a first oxide semiconductor layer disposed on the first interlayer insulating layer not to overlap the first semiconductor layer;
a second gate insulating layer disposed on the first oxide semiconductor layer;
a second gate electrode disposed on the second gate insulating layer and overlapping the first oxide semiconductor layer;
spacers disposed on side surfaces of the second gate electrode; and
a second interlayer insulating layer disposed on the spacers,
wherein each of the spacers comprises a first spacer disposed to contact a side surface of the second gate electrode and a second spacer disposed on the first spacer, and
wherein a concentration of hydrogen included in the first spacer is lower than a concentration of hydrogen included in the second spacer.