US 12,279,472 B2
Quantum dot light emitting diode, method for manufacturing the same, and display device
Dong Li, Beijing (CN)
Assigned to Beijing BOE Technology Development Co., Ltd., Beijing (CN); and BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
Appl. No. 17/772,612
Filed by Beijing BOE Technology Development Co., Ltd., Beijing (CN); and BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
PCT Filed May 31, 2021, PCT No. PCT/CN2021/097396
§ 371(c)(1), (2) Date Apr. 28, 2022,
PCT Pub. No. WO2022/252052, PCT Pub. Date Dec. 8, 2022.
Prior Publication US 2024/0172469 A1, May 23, 2024
Int. Cl. H10K 50/16 (2023.01); H10K 50/115 (2023.01); H10K 71/13 (2023.01); H10K 101/40 (2023.01); H10K 102/00 (2023.01)
CPC H10K 50/166 (2023.02) [H10K 50/115 (2023.02); H10K 71/13 (2023.02); H10K 2101/40 (2023.02); H10K 2102/351 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A quantum dot light emitting diode, comprising an anode layer, a cathode layer, a quantum dot light emitting layer between the anode layer and the cathode layer, and an electron transport layer between the cathode layer and the quantum dot light emitting layer, wherein
the electron transport layer comprises at least a first energy level structure layer, a second energy level structure layer, and another first energy level structure layer, which are sequentially stacked, the first energy level structure layer is different from the second energy level structure layer, and a Lowest Unoccupied Molecular Orbital energy level of the first energy level structure layer is different from that of the second energy level structure layer,
wherein a material of one of the first energy level structure layer and the second energy level structure layer is zinc oxide, and a material of the other one of the first energy level structure layer and the second energy level structure layer is doped zinc oxide.