| CPC H10D 84/853 (2025.01) [H01L 21/3086 (2013.01); H01L 21/76895 (2013.01); H10D 30/024 (2025.01); H10D 30/6211 (2025.01); H10D 62/113 (2025.01); H10D 62/151 (2025.01); H10D 64/017 (2025.01); H10D 64/021 (2025.01); H10D 64/512 (2025.01); H10D 84/0186 (2025.01); H10D 84/0188 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01)] | 18 Claims |
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1. A semiconductor device, comprising:
a first fin type pattern extending in a first direction on a substrate;
a second fin type pattern extending in the first direction on the substrate, the first fin type pattern and the second fin type pattern being spaced apart from each other along a second direction intersecting with the first direction;
a first gate electrode extending in the second direction on the first fin type pattern;
a second gate electrode extending in the second direction on the second fin type pattern, the first gate electrode and the second gate electrode being arranged along the second direction;
a third gate electrode extending in the second direction on the first fin type pattern, the first gate electrode and the third gate electrode being spaced apart from each other along the first direction;
a fourth gate electrode extending in the second direction on the second fin type pattern, the third gate electrode and the fourth gate electrode being arranged along the second direction;
a first source/drain region on the first fin type pattern between the first gate electrode and the third gate electrode;
a second source/drain region on the second fin type pattern between the second gate electrode and the fourth gate electrode;
a separation structure extending in the first direction between the first fin type pattern and the second fin type pattern, the first gate electrode and the second gate electrode are separated by the separation structure, and the third gate electrode and the fourth gate electrode are separated by the separation structure; and
a contact extending in the second direction on the separation structure, the contact connecting the first source/drain region and the second source/drain region.
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