US 12,279,441 B2
Insulated gate bipolar transistor, power module, and living appliance
Lishu Liu, Foshan (CN); and Yuxiang Feng, Foshan (CN)
Assigned to GUANGDONG MIDEA WHITE HOME APPLIANCE TECHNOLOGY INNOVATION CENTER CO., LTD., Foshan (CN); and MIDEA GROUP CO., LTD., Foshan (CN)
Filed by Guangdong Midea White Home Appliance Technology Innovation Center Co., Ltd., Foshan (CN); and Midea Group Co., Ltd., Foshan (CN)
Filed on Apr. 19, 2022, as Appl. No. 17/724,413.
Application 17/724,413 is a continuation of application No. PCT/CN2019/125921, filed on Dec. 17, 2019.
Claims priority of application No. 201911013226.4 (CN), filed on Oct. 23, 2019.
Prior Publication US 2022/0238705 A1, Jul. 28, 2022
Int. Cl. H10D 12/00 (2025.01); H10D 62/17 (2025.01)
CPC H10D 12/441 (2025.01) [H10D 62/393 (2025.01)] 20 Claims
OG exemplary drawing
 
1. An insulated gate bipolar transistor, comprising a semiconductor substrate, the semiconductor substrate comprising:
a collector region doped in a first type, wherein the collector region comprises a bump region;
a first drift region doped in a second type and a second drift region doped in the second type, wherein the first drift region and the second drift region are located on a side of the collector region having the bump region, a profile contour of the first drift region matches a profile contour of the bump region, such that the second drift region does not contact the bump region, and a doping concentration of the first drift region is greater than a doping concentration of the second drift region; and
a first active region and a second active region, formed at two opposite ends of the second drift region, wherein each of the first active region and the second active region comprises:
a first type of well region, formed in the second drift region; and
an emission region doped in the second type, formed in the first type of well region; and wherein a portion of the bump region extends into a gap between the first active region and the second active region.