US 12,279,434 B2
NAND structures with polarized materials
Albert Fayrushin, Boise, ID (US); Kamal Karda, Boise, ID (US); Gianpietro Carnevale, Bottanuco (IT); and Aurelio Giancarlo Mauri, Meda (IT)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on May 11, 2022, as Appl. No. 17/662,982.
Prior Publication US 2023/0371264 A1, Nov. 16, 2023
Int. Cl. H10B 51/20 (2023.01); H10B 51/30 (2023.01)
CPC H10B 51/20 (2023.02) [H10B 51/30 (2023.02)] 12 Claims
OG exemplary drawing
 
1. An apparatus, comprising:
a substrate;
an alternating stack of materials positioned on the substrate, the alternating stack of materials comprising conductive materials and dielectric materials;
a charge trapping material extending away from the substrate and through the alternating stack of materials, the charge trapping material associated with a plurality of memory cells;
a channel material extending away from the substrate and through the alternating stack of materials, the channel material associated with the plurality of memory cells; and
a polarized dielectric material extending away from the substrate and through the alternating stack of materials, the polarized dielectric material configured to shift an electron distribution of the channel material towards the charge trapping material.