US 12,279,420 B2
Memory having a continuous channel
Luan C. Tran, Meridian, ID (US); Hongbin Zhu, Boise, ID (US); John D. Hopkins, Boise, ID (US); and Yushi Hu, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Apr. 19, 2022, as Appl. No. 17/723,716.
Application 17/723,716 is a division of application No. 16/291,453, filed on Mar. 4, 2019, granted, now 11,315,941.
Application 16/291,453 is a continuation of application No. 15/450,893, filed on Mar. 6, 2017, granted, now 10,224,337, issued on Mar. 5, 2019.
Application 15/450,893 is a continuation of application No. 14/831,011, filed on Aug. 20, 2015, granted, now 9,613,973, issued on Apr. 4, 2017.
Claims priority of provisional application 62/059,321, filed on Oct. 3, 2014.
Prior Publication US 2022/0238543 A1, Jul. 28, 2022
Int. Cl. H10B 41/27 (2023.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 29/78 (2006.01); H10B 43/27 (2023.01)
CPC H10B 41/27 (2023.02) [H01L 21/823412 (2013.01); H01L 21/823487 (2013.01); H01L 21/823885 (2013.01); H01L 29/7827 (2013.01); H10B 43/27 (2023.02)] 7 Claims
OG exemplary drawing
 
1. An apparatus, comprising:
memory cells connected in series between a source select gate and a drain select gate and including a control gate material and a continuous oxide material;
a hollow continuous channel for the source select gate, the memory cells, and the drain select gate, wherein a doping concentration of a portion of the hollow continuous channel for the drain select gate is different than a doping concentration of a portion of the hollow continuous channel for the memory cells or a doping concentration of a portion of the hollow continuous channel for the source select gate, and wherein the portion of the hollow continuous channel for the memory cells is a p-type material; and
a charge storage structure material that is adjacent the portion of the hollow continuous channel for the memory cells, adjacent only a single side of the control gate material of the memory cells, and adjacent only two opposite sides of the continuous oxide material, wherein no portion of the charge storage structure material is adjacent the portion of the hollow continuous channel for the drain select gate, no portion of the charge storage structure material extends over any other side of the control gate material, and no portion of the charge storage structure material is adjacent any other side of the continuous oxide material.