US 12,279,416 B2
Semiconductor device with air gap and method for preparing the same
Tse-Yao Huang, Taipei (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Jun. 17, 2024, as Appl. No. 18/744,975.
Application 18/744,975 is a division of application No. 18/197,821, filed on May 16, 2023, granted, now 12,213,307.
Application 18/197,821 is a division of application No. 17/870,073, filed on Jul. 21, 2022, granted, now 12,213,306.
Prior Publication US 2024/0341087 A1, Oct. 10, 2024
Int. Cl. H10B 12/00 (2023.01)
CPC H10B 12/482 (2023.02) [H10B 12/30 (2023.02)] 7 Claims
OG exemplary drawing
 
1. A method for preparing a semiconductor device, comprising:
forming a bottom barrier material over a semiconductor substrate;
forming a conductive material over the bottom barrier material;
forming a top barrier material over the conductive material;
etching the top barrier material, the conductive material, the bottom barrier material, and the semiconductor substrate to form an opening, wherein remaining portions of the top barrier material, the conductive material, and the bottom barrier material form an I-shaped structure;
depositing an isolation layer in the opening such that an air gap is formed in the isolation layer; and
forming an anti-reflective material over the top barrier material before the opening is formed, wherein the anti-reflective material is etched during the forming of the opening.