| CPC H10B 12/30 (2023.02) [H01G 4/10 (2013.01); H10B 12/03 (2023.02); H10D 1/692 (2025.01)] | 18 Claims |
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1. A capacitor for DRAM (dynamic random access memory) comprising:
a first electrode;
a second electrode spaced apart from the first electrode; and
a dielectric layer including a hafnium-zirconium oxide (HfZrO) film disposed between the first electrode and the second electrode,
wherein the HfZrO film has an intermediate state corresponding to a phase transition region between a first state in which tetragonal crystalline phase is dominant and a second state in which orthorhombic crystalline phase is dominant, and
wherein the HfZrO film maintains the intermediate state corresponding to the phase transition region within an operating voltage range of the capacitor,
wherein in an initial state in which no voltage is applied between the first electrode and the second electrode, the HfZrO film has a first intermediate state corresponding to the phase transition region,
wherein, when a first operating voltage is applied between the first electrode and the second electrode to charge the capacitor, the HfZrO film has a second intermediate state corresponding to the phase transition region, and
wherein the content of the orthorhombic crystalline phase of the second intermediate state is higher than that of the orthorhombic crystalline phase of the first intermediate state.
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