US 12,279,372 B2
Component carrier with a magnetic element and a manufacturing method
Ivan Salkovic, Zagreb (HR); and Vanesa López Blanco, Vimianzo (ES)
Assigned to AT&S Austria Technologie &Systemtechnik Aktiengesellschaft, Leoben (AT)
Filed by AT&S Austria Technologie & Systemtechnik Aktiengesellschaft, Leoben (AT)
Filed on May 13, 2022, as Appl. No. 17/663,418.
Claims priority of application No. 21174488 (EP), filed on May 18, 2021.
Prior Publication US 2022/0377896 A1, Nov. 24, 2022
Int. Cl. H05K 1/02 (2006.01); H01F 17/00 (2006.01); H01F 17/06 (2006.01); H01F 27/26 (2006.01); H01F 27/40 (2006.01); H05K 1/09 (2006.01); H05K 1/16 (2006.01); H05K 3/12 (2006.01)
CPC H05K 1/165 (2013.01) [H01F 17/0006 (2013.01); H05K 1/09 (2013.01); H05K 3/1216 (2013.01); H05K 2201/0358 (2013.01); H05K 2201/0376 (2013.01); H05K 2203/308 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A component carrier, comprising:
a stack including at least one electrically conductive layer structure and at least one electrically insulating layer structure;
a magnetic element assembled to the stack, the magnetic element including an embedded inductive element; and
a dielectric layer structure on the stack, the dielectric layer structure at least partially surrounding the magnetic element,
wherein a first main surface of the magnetic element is flush with a respective first main surface of the dielectric layer structure,
wherein an opposed main surface of the magnetic element contacts a respective opposed main surface of the stack,
wherein the magnetic element includes a plurality of gaps,
wherein the embedded inductive element is in the gaps,
wherein the magnetic element comprises:
a magnetic matrix, and
wherein the embedded inductive element is an electrically conductive structure that is at least partially embedded in the magnetic matrix,
wherein the dielectric layer structure comprises a shift pattern at an interface between a first dielectric layer structure and a second dielectric layer structure,
wherein the shift pattern comprises at least one of the group which consists of an alignment shift, a smearing, a tapering of a dielectric layer structure sidewall being in contact with a sidewall of the magnetic element,
wherein the magnetic element comprises a first magnetic element and a second magnetic element,
wherein the second magnetic element is placed directly on the first magnetic element,
wherein the first dielectric layer structure at least partially surrounds the first magnetic element, and the second dielectric layer structure at least partially surrounds the second magnetic element.