| CPC H04N 25/531 (2023.01) [H04N 25/771 (2023.01); H04N 25/772 (2023.01)] | 16 Claims |
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1. A time delay integration (TDI) complementary metal-oxide-semiconductor (CMOS) image sensor, configured to capture an image frame using a rolling shutter and move with respect to a scene in an along-track direction, the image sensor comprising:
a first pixel array and a second pixel array, each comprising multiple pixel columns, each of the pixel columns comprising multiple pixels arranged in the along-track direction, and two adjacent pixels of each of the pixel columns having a separation space therebetween,
wherein the first pixel array and the second pixel array are arranged along the along-track direction, and each of the pixel columns of the first pixel array is aligned with a corresponding pixel column of the second pixel array configured to sequentially cross a same position of the scene; and
multiple integrators, configured to respectively integrate first pixel data associated with the first pixel array and second pixel data associated with the second pixel array of the same position of the scene in adjacent image frames, wherein
a frame period of capturing the image frame is larger than a summation of row exposure times of exposing all pixel rows of the first pixel array or the second pixel array using the rolling shutter, and
in a time difference between the frame period and the summation of row exposure times, the image sensor enters a sleep mode.
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