US 12,278,629 B2
Delay circuit and memory
Tianchen Lu, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Jan. 17, 2023, as Appl. No. 18/155,212.
Application 18/155,212 is a continuation of application No. PCT/CN2022/100189, filed on Jun. 21, 2022.
Prior Publication US 2023/0378956 A1, Nov. 23, 2023
Int. Cl. H03K 19/0175 (2006.01); G11C 7/10 (2006.01); G11C 7/22 (2006.01)
CPC H03K 19/017509 (2013.01) [G11C 7/109 (2013.01); G11C 7/222 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A delay circuit, comprising:
a self-shielding circuit, configured to: receive an initial command signal and N initial clock signals, register the initial command signal according to a first initial clock signal among the N initial clock signals that triggers the initial command signal at earliest, shield other N−1 second initial clock signals among the N initial clock signals, and output N intermediate command signals, where N is an integer greater than or equal to 2, and the N initial clock signals have a same frequency and different phases; and
a delay, electrically connected to the self-shielding circuit, and configured to: receive the N intermediate command signals and the N initial clock signals, and delay and output the N intermediate command signals to obtain a delayed command signal;
wherein the self-shielding circuit comprises:
a shielding circuit, configured to receive the N initial clock signals and output N intermediate clock signals; wherein the N intermediate clock signals comprise a first intermediate clock signal that is valid and N−1 second intermediate clock signals that are invalid; and
a register, electrically connected to the shielding circuit, and configured to: receive the initial command signal and the N intermediate clock signals, register the initial command signal according to the first intermediate clock signal, and obtain and output the N intermediate command signals.