US 12,278,607 B2
Method for fabricating an acoustic resonator device with perimeter structures
Ramakrishna Vetury, Charlotte, NC (US); Alexander Y. Feldman, Huntersville, NC (US); Michael D. Hodge, Belmont, NC (US); Art Geiss, Greensboro, NC (US); Shawn R. Gibb, Huntersville, NC (US); Mark D. Boomgarden, Huntersville, NC (US); Michael P. Lewis, Charlotte, NC (US); Pinal Patel, Charlotte, NC (US); and Jeffrey B. Shealy, Cornelius, NC (US)
Assigned to Akoustis, Inc., Huntersville, NC (US)
Filed by Akoustis, Inc., Huntersville, NC (US)
Filed on Jun. 27, 2023, as Appl. No. 18/342,623.
Application 18/342,623 is a continuation of application No. 17/490,733, filed on Sep. 30, 2021, granted, now 11,728,781.
Application 17/490,733 is a continuation of application No. 16/136,158, filed on Sep. 19, 2018, granted, now 11,165,404, issued on Nov. 2, 2021.
Application 16/136,158 is a continuation of application No. 15/342,061, filed on Nov. 2, 2016, granted, now 10,110,189, issued on Oct. 23, 2018.
Application 15/342,061 is a continuation of application No. 15/341,218, filed on Nov. 2, 2016, granted, now 10,110,190, issued on Oct. 23, 2018.
Prior Publication US 2023/0344399 A1, Oct. 26, 2023
Int. Cl. H04R 17/00 (2006.01); H03H 3/02 (2006.01); H03H 3/04 (2006.01); H03H 9/02 (2006.01); H03H 9/05 (2006.01); H03H 9/10 (2006.01); H03H 9/13 (2006.01); H03H 9/17 (2006.01); H03H 9/56 (2006.01)
CPC H03H 3/02 (2013.01) [H03H 3/04 (2013.01); H03H 9/02118 (2013.01); H03H 9/0514 (2013.01); H03H 9/1035 (2013.01); H03H 9/131 (2013.01); H03H 9/132 (2013.01); H03H 9/133 (2013.01); H03H 9/171 (2013.01); H03H 9/174 (2013.01); H03H 9/564 (2013.01); H03H 9/568 (2013.01); H03H 2003/0414 (2013.01); H03H 2003/0428 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for fabricating an acoustic resonator device, the method comprising:
providing a substrate having a substrate surface region and a backside cavity characterized by a cavity geometric area;
forming a piezoelectric layer overlying the substrate surface region, the piezoelectric layer having a top piezoelectric surface region and a bottom piezoelectric surface region;
forming a topside energy confinement structure overlying the top piezoelectric surface region, the topside energy confinement structure being characterized by a topside structure geometric area and a topside structure perimeter, the topside energy confinement structure having at least one portion removed forming a topside structure break region;
forming a topside metal electrode overlying the top piezoelectric surface region and within the topside energy confinement structure, the topside metal electrode being characterized by a topside electrode geometric area;
forming a backside energy confinement structure underlying the bottom piezoelectric surface region, the backside energy confinement structure being characterized by a backside structure geometric area, the backside energy confinement structure having at least one portion removed forming a backside structure break region; and
forming a backside metal electrode underlying the bottom piezoelectric surface region and within the backside energy confinement structure, the backside metal electrode being characterized by a backside electrode geometric area.