US 12,278,606 B2
Epitaxial growth of aluminum on aluminum-nitride compounds
John Andrew Logan, Lawrence, MA (US); Brian Douglas Schultz, Lexington, MA (US); and Theodore D. Kennedy, Derry, NH (US)
Assigned to Raytheon Company, Arlington, VA (US)
Filed by Raytheon Company, Waltham, MA (US)
Filed on May 14, 2021, as Appl. No. 17/321,031.
Prior Publication US 2022/0368302 A1, Nov. 17, 2022
Int. Cl. H03H 9/02 (2006.01); C23C 14/18 (2006.01); C23C 14/28 (2006.01); C30B 23/02 (2006.01); C30B 29/02 (2006.01); H03H 3/02 (2006.01); H03H 9/13 (2006.01); H03H 9/17 (2006.01)
CPC H03H 3/02 (2013.01) [C23C 14/18 (2013.01); C23C 14/28 (2013.01); C30B 23/025 (2013.01); C30B 29/02 (2013.01); H03H 9/02031 (2013.01); H03H 9/13 (2013.01); H03H 9/174 (2013.01); H03H 9/176 (2013.01); H03H 2003/023 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A Bulk Acoustic Wave (BAW) resonator structure comprising:
a mono-crystalline aluminum-nitride-compound layer;
a first contact layer coupled to a first face of the mono-crystalline aluminum-nitride-compound layer, the first contact layer being a mono-crystalline aluminum contact layer crystallographically coupled to the mono-crystalline aluminum-nitride-compound layer; and
a second contact layer coupled to a second face of the mono-crystalline aluminum-nitride-compound layer, wherein the wherein the second contact is a poly-crystalline aluminum layer.