	US 12,278,573 B2
	Friction nano power generation synaptic transistor
Qihan Liu, Jiangsu (CN); Chun Zhao, Jiangsu (CN); Cezhou Zhao, Jiangsu (CN); Yina Liu, Jiangsu (CN); and Li Yang, Jiangsu (CN)
Assigned to XI'AN JIAOTONG-LIVERPOOL UNIVERSITY, Suzhou (CN)
Appl. No. 18/042,283
Filed by XI'AN JIAOTONG-LIVERPOOL UNIVERSITY, Jiangsu (CN)
PCT Filed Dec. 8, 2021, PCT No. PCT/CN2021/136366 § 371(c)(1), (2) Date Feb. 20, 2023, PCT Pub. No. WO2022/121931, PCT Pub. Date Jun. 16, 2022.
Claims priority of application No. 202011421752.7 (CN), filed on Dec. 8, 2020.
Prior Publication US 2023/0327579 A1, Oct. 12, 2023
Int. Cl. H02N 1/04 (2006.01); G06N 3/063 (2023.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 30/68 (2025.01); H10D 48/50 (2025.01); H10N 30/30 (2023.01); H10D 62/80 (2025.01)

CPC H02N 1/04 (2013.01) [G06N 3/063 (2013.01); H10D 30/023 (2025.01); H10D 48/50 (2025.01); H10N 30/30 (2023.02); H10D 30/67 (2025.01); H10D 30/6891 (2025.01); H10D 62/80 (2025.01)]

7 Claims

1. A friction nano power generation synaptic transistor, comprising a friction nano generator, a synaptic transistor, a substrate, an electrode layer formed on the substrate, a shared intermediate layer formed on the electrode layer, a synaptic transistor active layer, a source electrode and a drain electrode which are formed on the shared intermediate layer, and a positive friction layer and a negative friction layer formed on the shared intermediate layer; wherein the shared intermediate layer is used as a dielectric layer of the synaptic transistor and an intermediate layer of the friction nano generator, and the electrode layer is used as an output electrode of the friction nano generator and a gate electrode of the synaptic transistor; in a case where the negative friction layer is rubbed by using a positive friction material or the positive friction layer is rubbed by using a negative friction material, the shared intermediate layer generates a pulse voltage, and charges in the shared intermediate layer are transferred to change an electrical conductivity of the synaptic transistor active layer, and an excitatory postsynaptic current is generated between the source electrode and the drain electrode.