US 12,278,553 B2
Gate driving circuit for power semiconductor element
Takuya Sakai, Tokyo (JP)
Assigned to MITSUBISHI ELECTRIC CORPORATION, Tokyo (JP)
Appl. No. 17/927,893
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
PCT Filed Jul. 16, 2020, PCT No. PCT/JP2020/027606
§ 371(c)(1), (2) Date Nov. 28, 2022,
PCT Pub. No. WO2022/013998, PCT Pub. Date Jan. 20, 2022.
Prior Publication US 2023/0208274 A1, Jun. 29, 2023
Int. Cl. H02M 1/08 (2006.01); H02M 1/00 (2006.01)
CPC H02M 1/08 (2013.01) [H02M 1/0009 (2021.05)] 15 Claims
OG exemplary drawing
 
1. A power semiconductor element gate driving circuit that performs ON/OFF control on main current of a power semiconductor element having a gate electrode by charging the gate electrode of the power semiconductor element with electric charges and discharging the electric charges on the basis of an inputted gate signal, and comprising:
a first differential amplifier that outputs a difference between a temperature detection value obtained by detecting the temperature of the power semiconductor element and a current detection value which is a detection value of the main current, and
a second differential amplifier that controls a gate current for discharging the electric charges from the gate electrode on the basis of an output from the first differential amplifier,
wherein
when the gate signal is switched to an OFF signal, control is performed such that the gate current increases in association with increase in a temperature of the power semiconductor element and decreases in association with increase in the main current.