US 12,278,486 B2
Electrostatic discharge protection for RF pins
Gernot Langguth, Oberhaching (DE); Christoph Eichenseer, Regensburg (DE); and Stefan Kokorovic, Villach (AT)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Jan. 26, 2022, as Appl. No. 17/584,990.
Prior Publication US 2023/0238797 A1, Jul. 27, 2023
Int. Cl. H02H 9/04 (2006.01); H01L 27/02 (2006.01); H02H 9/00 (2006.01)
CPC H02H 9/046 (2013.01) [H01L 27/0255 (2013.01); H02H 9/005 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A radio frequency integrated circuit (RFIC) device comprising:
a first RF input/output (I/O) terminal;
a second RF I/O terminal, wherein the first RF I/O terminal and the second RF I/O terminal are configured to transmit or receive an RF signal;
a capacitor coupled between the first RF I/O terminal and the second RF I/O terminal;
a first coil coupled between the first RF I/O terminal and the second RF I/O terminal, wherein the first coil is configured to provide ESD protection to the capacitor during a first ESD event; and
a fast transient ESD protection circuit coupled between the first RF I/O terminal and the second RF I/O terminal, wherein the fast transient ESD protection circuit is configured to provide ESD protection to the capacitor during a second ESD event different from the first ESD event, wherein a first rise time of a first ESD current of the first ESD event is longer than a second rise time of a second ESD current of the second ESD event, wherein during the first ESD event, the first coil is configured to conduct an ESD current of the first ESD event while the fast transient ESD protection circuit is inactive.