US 12,278,423 B2
Terahertz element and semiconductor device
Toshikazu Mukai, Kyoto (JP); Jaeyoung Kim, Kyoto (JP); and Tomoichiro Toyama, Kyoto (JP)
Assigned to ROHM CO., LTD., Kyoto (JP)
Filed by ROHM CO., LTD., Kyoto (JP)
Filed on May 23, 2023, as Appl. No. 18/322,326.
Application 18/322,326 is a continuation of application No. 17/644,225, filed on Dec. 14, 2021, granted, now 11,699,846.
Application 17/644,225 is a continuation of application No. 16/619,440, granted, now 11,239,547, previously published as PCT/JP2018/024179, filed on Jun. 26, 2018.
Claims priority of application No. 2017-125370 (JP), filed on Jun. 27, 2017; and application No. 2017-202021 (JP), filed on Oct. 18, 2017.
Prior Publication US 2023/0378640 A1, Nov. 23, 2023
Int. Cl. H01Q 1/38 (2006.01); H01L 23/00 (2006.01); H01L 23/66 (2006.01); H01L 27/06 (2006.01); H01L 29/88 (2006.01); H01Q 9/16 (2006.01)
CPC H01Q 1/38 (2013.01) [H01L 23/66 (2013.01); H01L 24/48 (2013.01); H01L 27/0676 (2013.01); H01L 29/882 (2013.01); H01L 2223/6672 (2013.01); H01L 2223/6677 (2013.01); H01L 2224/48225 (2013.01); H01Q 9/16 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a support;
a terahertz element disposed on the support and configured to radiate an electromagnetic wave with a frequency in a terahertz band; and
a case disposed on the support and having an opening in which the terahertz element is housed,
wherein the opening comprises a first side surface which is inclined with respect to a thickness direction of the support,
the opening comprises a second side surface surrounding the terahertz element and disposed between the first side surface and the support in the thickness direction of the support, and
the second side surface extends along the thickness direction of the support.