US 12,278,320 B2
Light emitting device and manufacturing method therefor
Yoshiaki Yasuda, Tokyo (JP); Hirofumi Chiba, Tokyo (JP); Mitsuyasu Kumagai, Tokyo (JP); Yukio Suzuki, Miyagi (JP); and Shuji Tanaka, Miyagi (JP)
Assigned to STANLEY ELECTRIC CO., LTD., Tokyo (JP)
Appl. No. 17/615,009
Filed by STANLEY ELECTRIC CO., LTD., Tokyo (JP)
PCT Filed May 13, 2020, PCT No. PCT/JP2020/019134
§ 371(c)(1), (2) Date Nov. 29, 2021,
PCT Pub. No. WO2020/241261, PCT Pub. Date Dec. 3, 2020.
Claims priority of application No. 2019-100973 (JP), filed on May 30, 2019.
Prior Publication US 2022/0231212 A1, Jul. 21, 2022
Int. Cl. H01L 33/64 (2010.01); H01L 23/00 (2006.01); H01L 33/32 (2010.01); H01L 33/48 (2010.01); H01L 33/60 (2010.01); H01L 33/62 (2010.01); H01S 5/02 (2006.01); H01S 5/042 (2006.01); H01S 5/183 (2006.01)
CPC H01L 33/647 (2013.01) [H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/83 (2013.01); H01L 33/486 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01); H01L 24/30 (2013.01); H01L 24/33 (2013.01); H01L 33/32 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/05571 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/06132 (2013.01); H01L 2224/29013 (2013.01); H01L 2224/29023 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29144 (2013.01); H01L 2224/30505 (2013.01); H01L 2224/30517 (2013.01); H01L 2224/32014 (2013.01); H01L 2224/32111 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/33106 (2013.01); H01L 2224/83815 (2013.01); H01L 2224/8383 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/12041 (2013.01); H01L 2933/0066 (2013.01); H01L 2933/0075 (2013.01); H01S 5/021 (2013.01); H01S 5/04256 (2019.08); H01S 5/183 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A light emitting device, comprising:
a light emitting element including:
a semiconductor layer which includes a light emitting layer; and
a first element electrode and a second element electrode which are joined to the semiconductor layer and through which a current for causing the light emitting layer to emit light is to be supplied; and
a Si substrate provided with a cavity, the light emitting element being installed on a bottom surface of the cavity,
wherein:
the first element electrode is disposed on a surface of the semiconductor layer which faces the bottom surface of the cavity,
a slit-shaped through hole extends from the bottom surface of the cavity through the Si substrate in a thickness direction of the Si substrate, and a through electrode at least partially fills the through hole,
the through hole and the through electrode are provided at a position facing the first element electrode of the light emitting element,
a length of an upper surface of the through electrode in a long axis direction is larger than a height of the through electrode in the thickness direction of the Si substrate, and a length of the upper surface of the through electrode in a short axis direction is smaller than the height,
a joining layer having a shape corresponding to a shape of the upper surface of the through electrode is disposed between the first element electrode of the light emitting element and the upper surface of the through electrode facing the first element electrode,
an entire upper surface of the through electrode is joined to the first element electrode via the joining layer, and
a part of the joining layer fills a gap between an upper portion of an inner wall of the through hole of the Si substrate and the through electrode.