US 12,278,312 B2
Semiconductor light-emitting element and method of manufacturing semiconductor light-emitting element
Noritaka Niwa, Hakusan (JP); and Tetsuhiko Inazu, Hakusan (JP)
Assigned to NIKKISO CO., LTD., Tokyo (JP)
Filed by NIKKISO CO., LTD., Tokyo (JP)
Filed on Mar. 7, 2023, as Appl. No. 18/118,497.
Application 18/118,497 is a continuation of application No. 17/012,973, filed on Sep. 4, 2020, granted, now 11,626,540.
Claims priority of application No. 2019-198541 (JP), filed on Oct. 31, 2019.
Prior Publication US 2023/0223499 A1, Jul. 13, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 33/38 (2010.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 33/40 (2010.01); H01L 33/44 (2010.01); H01L 33/14 (2010.01)
CPC H01L 33/44 (2013.01) [H01L 33/0075 (2013.01); H01L 33/32 (2013.01); H01L 33/38 (2013.01); H01L 33/405 (2013.01); H01L 33/0012 (2013.01); H01L 33/145 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A semiconductor light-emitting element comprising:
an n-type semiconductor layer made of an n-type AlGaN-based semiconductor material;
an active layer made of an AlGaN-based semiconductor material provided on a first upper surface of the n-type semiconductor layer;
an n-side contact electrode provided to be in contact with a second upper surface of the n-type semiconductor layer;
an n-side electrode covering layer made of Ti or TiN that covers an upper surface and a side surface of the n-side contact electrode and is in contact with a second protective layer;
a p-type semiconductor layer provided on the active layer;
a p-side contact electrode made of Rh and in contact with an upper surface of the p-type semiconductor layer;
a p-side electrode covering layer made of Ti or TiN that covers an upper surface and a side surface of the p-side contact electrode;
a first protective layer made of SiO2 or SiON that has a first p-side pad opening provided on a portion of an upper surface of the p-side electrode covering layer, covers an upper surface and a side surface of the p-side electrode covering layer in a portion different from that of the first p-side pad opening;
the second protective layer made of Al2O3 that has a second p-side pad opening that communicates with the first p-side pad opening and covers the first protective layer, a side surface of the p-type semiconductor layer, and a side surface of the active layer in a portion different from that of the second p-side pad opening; and
a p-side pad electrode that is in contact with the p-side electrode covering layer in the first p-side pad opening and the second p-side pad opening.