US 12,278,309 B2
Epitaxial oxide materials, structures, and devices
Petar Atanackovic, Henley Beach South (AU)
Assigned to Silanna UV Technologies Pte Ltd, Singapore (SG)
Filed by Silanna UV Technologies Pte Ltd, Singapore (SG)
Filed on Feb. 10, 2023, as Appl. No. 18/167,349.
Application 18/167,349 is a continuation of application No. 17/653,828, filed on Mar. 7, 2022, granted, now 11,621,329.
Application 17/653,828 is a continuation of application No. PCT/IB2021/060413, filed on Nov. 10, 2021.
Prior Publication US 2023/0197794 A1, Jun. 22, 2023
Int. Cl. H01L 33/26 (2010.01); H01L 29/267 (2006.01); H01L 33/00 (2010.01); H01L 33/04 (2010.01); H01L 33/40 (2010.01); H01S 5/183 (2006.01); H01S 5/32 (2006.01); H01S 5/34 (2006.01)
CPC H01L 33/26 (2013.01) [H01L 29/267 (2013.01); H01L 33/002 (2013.01); H01L 33/005 (2013.01); H01L 33/04 (2013.01); H01L 33/40 (2013.01); H01S 5/3206 (2013.01); H01S 5/183 (2013.01); H01S 5/34 (2013.01); H01S 5/3425 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A semiconductor structure comprising:
a first epitaxial oxide semiconductor layer;
a metal layer comprising a high work function metal; and
a contact layer in contact with the metal layer, and between the first epitaxial oxide semiconductor layer and the metal layer, the contact layer forming a p-contact with the metal layer, the contact layer comprising:
a chirp layer in contact with the metal layer, the chirp layer comprising a graded epitaxial oxide semiconductor material comprising a gradient in a composition in contact with the metal layer, and a thickness from greater than 0 nm to less than 20 nm.