US 12,278,304 B2
High modulation speed PIN-type photodiode
Yuri Berk, Kirvat Tivon (IL); Vladimir Iakovlev, Ecublens (CH); Tamir Sharkaz, Kfar Tavor (IL); Elad Mentovich, Tel Aviv (IL); Matan Galanty, Korazim (IL); Itshak Kalifa, Bat-Yam (IL); and Paraskevas Bakopoulos, Ilion (GR)
Assigned to Mellanox Technologies, Ltd., Yokneam (IL)
Filed by Mellanox Technologies, Ltd., Yokneam (IL)
Filed on Feb. 22, 2021, as Appl. No. 17/249,140.
Claims priority of application No. 20210100075 (GR), filed on Feb. 4, 2021.
Prior Publication US 2022/0246781 A1, Aug. 4, 2022
Int. Cl. H01L 31/105 (2006.01); H01L 31/0304 (2006.01)
CPC H01L 31/105 (2013.01) [H01L 31/03046 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A PIN-type photodiode comprising:
a p-type contact;
an n-type contact;
a first absorbing layer characterized by a first absorption coefficient; and
a second absorbing layer characterized by a second absorption coefficient, wherein the second absorption coefficient is greater than the first absorption coefficient,
wherein the first absorbing layer is disposed between the p-type contact and the second absorbing layer,
wherein the second absorbing layer is disposed between the first absorbing layer and a non-absorbing accelerating layer, wherein the non-absorbing accelerating layer is disposed between the second absorbing layer and a non-absorbing drift layer, the non-absorbing accelerating layer configured to cause an increase in drift speed of photoinduced electrons freed by absorption of light by the first absorbing layer and/or the second absorbing layer, and
wherein the non-absorbing drift layer is disposed between the non-absorbing accelerating layer and the n-type contact, wherein the non-absorbing drift layer is a carrier transport layer having a third absorption coefficient, wherein the third absorption coefficient is less than the first absorption coefficient and the second absorption coefficient, wherein the non-absorbing drift layer is configured such that an electric field in the non-absorbing drift layer is lower than an electric field in the first absorbing layer and the second absorbing layer,
wherein a thickness of the second absorbing layer has an upper boundary defined by a strain relaxation of a crystal lattice constant of the first absorbing layer.